Features

– 15 mA Active Current

– 40 µA CMOS Standby Current

– Single Cycle Reprogram (Erase and Program)

– 1024 Sectors (128 Bytes/Sector)

– Internal Address and Data Latches for 128 Bytes

1.

Description

The AT29LV010A is a 3-volt only in-system Flash programmable and erasable read

only memory (Flash). Its 1 megabit of memory is organized as 131,072 bytes by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 120 ns with power dissipation of just 54 mW over the commercial tem-

perature range. When the device is deselected, the CMOS standby current is less

than 40 µA. The device endurance is such that any sector can typically be written to in

excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29LV010A does not require

high input voltages for programming. Three-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

EPROM. Reprogramming the AT29LV010A is performed on a sector basis; 128 bytes

of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

1-megabit

(128K x 8)

3-volt Only

Flash Memory

AT29LV010A

0520F–FLASH–9/08

Not Recommended

for New Design

Use AT29BV010A

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