Electronic Components Datasheet Search |
|
FS6S0965RCB Datasheet(PDF) 3 Page - Fairchild Semiconductor |
|
|
FS6S0965RCB Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page FS6S0965RCB 3 Electrical Characteristics (SenseFET part) (Ta=25 °C unless otherwise specified) Notes: 1.Pulse test : Pulse width ≤ 300µS, duty 2% 2. Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V - - 200 µA VDS=520V VGS=0V, TC=125 °C - - 300 µA Static Drain-Source On Resistance (1) RDS(ON) VGS=10V, ID=1.8A - 1.0 1.2 Ω Forward Transconductance (2) gfs VDS=50V, ID=1.8A - - - S Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 1300 - pF Output Capacitance Coss - 135 - Reverse Transfer Capacitance Crss - 25 - Turn On Delay Time td(on) VDD=325V, ID=6.5A (MOSFET switching time is essentially independent of operating temperature) -25 - nS Rise Time tr - 75 - Turn Off Delay Time td(off) - 130 - Fall Time tf - 70 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=6.5A, VDS=520V (MOSFET switching time is essentially independent of operating temperature) -45 60 nC Gate-Source Charge Qgs - 8 - Gate-Drain (Miller) Charge Qgd - 21 - S 1 R ---- = |
Similar Part No. - FS6S0965RCB |
|
Similar Description - FS6S0965RCB |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |