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M29W800DT70N1 Datasheet(PDF) 33 Page - STMicroelectronics

Part # M29W800DT70N1
Description  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W800DT70N1 Datasheet(HTML) 33 Page - STMicroelectronics

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M29W800DT, M29W800DB
Table 25. CFI Query System Interface Information
Note: 1. Not supported in the CFI
Table 26. Device Geometry Definition
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
0000h
VPP [Programming] Supply Minimum Program/Erase voltage
NA
1Eh
3Ch
0000h
VPP [Programming] Supply Maximum Program/Erase voltage
NA
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2n µs
16µs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2n µs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2n ms
1s
22h
44h
0000h
Typical timeout for full chip erase = 2n ms
see note (1)
23h
46h
0004h
Maximum timeout for byte/word program = 2n times typical
256µs
24h
48h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2n times typical
8s
26h
4Ch
0000h
Maximum timeout for chip erase = 2n times typical
see note (1)
Address
Data
Description
Value
x16
x8
27h
4Eh
0014h
Device Size = 2n in number of bytes
1 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
16 Kbyte
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 Kbyte
35h
36h
6Ah
6Ch
0000h
0000h
Region 3 Information
Number of identical size erase block = 0000h+1
1


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