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CL10B101KB8NNNC Datasheet(PDF) 25 Page - Samsung semiconductor |
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CL10B101KB8NNNC Datasheet(HTML) 25 Page - Samsung semiconductor |
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25 / 35 page  Multilayer Ceramic Capacitor - General - 24 - NO ITEM PERFORMANCE TEST CONDITION 14 HUMIDITY (STEADY STATE) APPEARANCE NO MECHANICAL DAMAGE SHALL OCCUR TEMPERATURE : 40±2 ℃ RELATIVE HUMIDITY:90~95 %RH TEST TIME : 500 +12/-0 Hr. MEASURE AT ROOM TEMPERATURE AFTER COOLING FOR CLASSⅠ :24±2Hr. CLASSⅡ :48±4Hr. CAPACITANCE CHARACTERISTIC CAPACITANCE CHANGE CLASS Ⅰ WITHIN ±5% OR ± 0.5㎊ WHICHEVER IS LARGER CLASS Ⅱ A,B WITHIN ±12.5% F WITHIN ±30% Q CLASSⅠ 30㎊ AND OVER : Q≥ 350 10 ~30㎊ :Q≥ 275 + 2.5×C LESS THAN 10pF : Q≥ 200 + 10×C Tanδ CLASS Ⅱ INSULATION RESISTANCE MINIMUM INSULATION RESISTANCE: 1,000 ㏁ OR 50㏁∙㎌ PRODUCT WHICHEVER IS SMALLER 15 MOISTURE RESISTANCE APPEARANCE NO MECHANICAL DAMAGE SHALL OCCUR APPLIED VOLTAGE : RATED VOLTAGE TEMPERATURE : 40±2 ℃ RELATIVE HUMIDITY:90~95%RH TEST TIME : 500 +12/-0 Hr. CURRENT APPLIED : 50㎃ MAX. <INITIAL MEASUREMENT> CLASS Ⅱ SHOULD BE MEASURED INITIAL VALUE AFTER BE HEAT-TREATED FOR 1 HR IN 150℃+0/-10℃ AND BE LEFT FOR 48±4HR AT ROOM TEMPERATURE. <LATTER MEASUREMENT> CLASSⅠ SHOULD BE MEASURED AFTER LEFT FOR 24±2 HRS IN ROOM TEMPERATURE AND HUMIDITY. CLASS Ⅱ SHOULD BE MEASURED LATTERVALUE AFTERBE HEAT-TREATED FOR 1 HR IN 150℃+0/-10 ℃ AND BE LEFT FOR 48±4HR AT ROOM TEMPERATURE. CAPACITANCE CHARACTERISTIC CAPACITANCE CHANGE CLASS Ⅰ WITHIN ±7.5% OR ± 0.75㎊ WHICHEVER IS LARGER CLASS Ⅱ A,B WITHIN ±12.5% F WITHIN ±30% WITHIN +30~－40% 1005 C>0.47μF 1608 C>1.0μF 2012 C>4.7μF 3216 C>10.0μF 3225 C>22.0μF 4532 C>47.0μF Q CLASSⅠ 30㎊ AND OVER : Q≥ 200 30㎊ AND BELOW : Q≥ 100 + 10/3×C Tanδ CLASSⅡ INSULATION RESISTANCE MINIMUM INSULATION RESISTANCE: 500 ㏁ OR 25㏁∙㎌ PRODUCT, WHICHEVER IS SMALLER. CHAR. 25V AND OVER 16V 10V 6.3V 4V A,B 0.05 0.05 MAX 0.05 MAX 0.075 MAX 0.1 MAX F 0.075 MAX 0.1MAX (C〈1.0㎌) 0.125 MAX (C≥1.0㎌) 0.15 MAX 0.195 MAX 0.25 MAX CHAR. 25V AND OVER 16V 10V 6.3V 4V A,B 0.05 MAX 0.05 MAX 0.05 MAX 0.075 MAX 0.1 MAX F 0.075 MAX 0.1MAX (C〈1.0㎌) 0.125MAX (C≥1.0㎌) 0.15 MAX 0.195 MAX 0.25 MAX 6.3V Tanδ 0.125 MAX *Condition CLASSⅡ (A,B) 1005 C ≥0.22㎌ 1608 C ≥2.2㎌ 2012 C ≥4.7㎌ 3216 C ≥10.0㎌ 3225 C ≥22.0㎌ 4532 C ≥47.0㎌ 5750 C ≥100.0㎌ 6.3V Tanδ 0.125 MAX *Condition CLASSⅡ (A,B) 1005 C ≥0.22㎌ 1608 C ≥2.2㎌ 2012 C ≥4.7㎌ 3216 C ≥10.0㎌ 3225 C ≥22.0㎌ 4532 C ≥47.0㎌ 5750 C ≥100.0㎌ |
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