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IDT70V25L15PFG Datasheet(PDF) 22 Page - Integrated Device Technology |
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IDT70V25L15PFG Datasheet(HTML) 22 Page - Integrated Device Technology |
22 / 25 page ![]() 6.42 IDT70V35/34S/L (IDT70V25/24S/L) High-Speed 3.3V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM Industrial and Commercial Temperature Ranges 22 Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70V35/34 (IDT70V25/24) SRAMs. not desirable, the BUSYlogiccanbedisabledbyplacingthepartinslave mode with the M/ Spin.OnceinslavemodetheBUSYpinoperatessolely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins HIGH. If desired, unintended write operations can be prevented to a port by tying the BUSY pin for that port LOW. The BUSY outputs on the IDT70V35/34 (IDT70V25/24) SRAM in master mode, are push-pull type outputs and do not require pull up resistors to operate. If these SRAMs are being expanded in depth, then the BUSYindicationfortheresultingarrayrequirestheuseofanexternal AND gate. Width Expansion with Busy Logic Master/Slave Arrays When expanding an IDT70V35/34 (IDT70V25/24) SRAM array in widthwhileusing BUSYlogic,onemasterpartisusedtodecidewhichside of the SRAM array will receive a BUSY indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the BUSY signal as a write inhibit signal. Thus on the IDT70V35/34 (IDT70V25/24) SRAM the BUSY pin is an output if the part is used as a master (M/ Spin = VIH), andthe BUSYpinisaninput if the part used as a slave (M/ S pin = VIL) as shown in Figure 3. Iftwoormoremasterpartswereusedwhenexpandinginwidth,asplit decision could result with one master indicating BUSYononesideofthe array and another master indicating BUSYononeothersideofthearray. This would inhibit the write operations from one port for part of a word and inhibitthewriteoperationsfromtheotherportfortheotherpartoftheword. The BUSY arbitration, on a master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enoughfora BUSYflagtobeoutputfromthemasterbeforetheactualwrite pulsecanbeinitiatedwitheithertheR/ Wsignalorthebyteenables.Failure toobservethistimingcanresultinaglitchedinternalwriteinhibitsignaland corrupted data in the slave. Semaphores The IDT70V35/34 (IDT70V25/24) is an extremely fast Dual-Port 8/ 4K x 18 (8/4K x 16) CMOS Static RAM with an additional 8 address locations dedicated to binary semaphore flags. These flags allow either processorontheleftorrightsideoftheDual-PortSRAMtoclaimaprivilege over the other processor for functions defined by the system designer’s Functional Description The IDT70V35/34 (IDT70V25/24) provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT70V35/34 (IDT70V25/24) has an automatic power down feature controlled by CE. TheCEcontrolson- chip power down circuitry that permits the respective port to go into a standby mode when not selected ( CE HIGH). When a port is enabled, access to the entire memory array is permitted. Interrupts Iftheuserchoosestheinterruptfunction,amemorylocation(mailbox or message center) is assigned to each port. The left port interrupt flag ( INTL) is asserted when the right port writes to memory location 1FFE (HEX) (FFE for IDT70V34 and IDT70V24), where a write is defined as the CER=R/WR=VIL perTruthTableIII.Theleftportclearstheinterrupt on the IDT70V35 and IDT70V25 by an address location 1FFE (FFE for IDT70V34andIDT70V24)accesswhen CEL=OEL=VIL,R/WLisa"don't care". Likewise, the right port interrupt flag ( INTR)issetwhentheleftport writestomemorylocation1FFFforIDT70V35andIDT70V25(HEX)(FFF for IDT70V34 and IDT70V24) and to clear the interrupt flag ( INTR), the right port must read the memory location 1FFF for IDT70V35 and IDT70V25 (FFF for IDT70V34 and IDT70V24). The message (16 bits) at 1FFE or 1FFF for IDT70V35 and IDT70V25 (FFE or FFF for IDT70V34 and IDT70V24) is user-defined, since it is an addressable SRAMlocation.Iftheinterruptfunctionisnotused,addresslocations1FFE and 1FFF for IDT70V35 and IDT70V25 (FFE and FFF for IDT70V34 and IDT70V24) are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation. Busy Logic BusyLogicprovidesahardwareindicationthatbothportsoftheSRAM haveaccessedthesamelocationatthesametime.Italsoallowsoneofthe twoaccessestoproceedandsignalstheothersidethattheSRAMis“busy”. The BUSYpincanthenbeusedtostalltheaccessuntiltheoperationon the other side is completed. If a write operation has been attempted from thesidethatreceivesa BUSYindication,thewritesignalisgatedinternally to prevent the write from proceeding. The use of BUSYlogicisnotrequiredordesirableforallapplications. In some cases it may be useful to logically OR the BUSYoutputstogether and use any BUSY indication as an interrupt source to flag the event of an illegal or illogical operation. If the write inhibit function of BUSYlogicis 5624 drw 19 MASTER Dual Port SRAM BUSYL BUSYR CE MASTER Dual Port SRAM BUSYL BUSYR CE SLAVE Dual Port SRAM BUSYL BUSYR CE SLAVE Dual Port SRAM BUSYL BUSYR CE BUSYL BUSYR , |
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