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AD586LRZ1 Datasheet(PDF) 7 Page - Analog Devices |
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AD586LRZ1 Datasheet(HTML) 7 Page - Analog Devices |
7 / 16 page AD586 Rev. G | Page 7 of 16 THEORY OF OPERATION The AD586 consists of a proprietary buried Zener diode refer- ence, an amplifier to buffer the output, and several high stability thin-film resistors, as shown in the block diagram in Figure 5. This design results in a high precision monolithic 5 V output reference with initial offset of 2.0 mV or less. The temperature compensation circuitry provides the device with a temperature coefficient of under 2 ppm/°C. Using the bias compensation resistor between the Zener output and the noninverting input to the amplifier, a capacitor can be added at the noise reduction pin (Pin 8) to form a low-pass filter and reduce the noise contribution of the Zener to the circuit. A1 RS RZ1 RZ2 RF RT RI AD586 GND VIN NOISE REDUCTION VOUT TRIM NOTES 1. PINS 1, 3, AND 7 ARE INTERNAL TEST POINTS. MAKE NO CONNECTIONS TO THESE POINTS. 6 5 4 8 2 Figure 5. Functional Block Diagram APPLYING THE AD586 The AD586 is simple to use in virtually all precision reference applications. When power is applied to Pin 2 and Pin 4 is grounded, Pin 6 provides a 5 V output. No external components are required; the degree of desired absolute accuracy is achieved simply by selecting the required device grade. The AD586 requires less than 3 mA quiescent current from an operating supply of 12 V or 15 V. An external fine trim may be desired to set the output level to exactly 5.000 V (calibrated to a main system reference). System calibration may also require a reference voltage that is slightly different from 5.000 V, for example, 5.12 V for binary applica- tions. In either case, the optional trim circuit shown in Figure 6 can offset the output by as much as 300 mV with minimal effect on other device characteristics. AD586 GND VIN CN 1 µF VO TRIM OPTIONAL NOISE REDUCTION CAPACITOR VIN NOISE REDUCTION OUTPUT 10k Ω 6 5 2 4 8 Figure 6. Optional Fine-Trim Configuration NOISE PERFORMANCE AND REDUCTION The noise generated by the AD586 is typically less than 4 µV p-p over the 0.1 Hz to 10 Hz band. Noise in a 1 MHz bandwidth is approximately 200 µV p-p. The dominant source of this noise is the buried Zener, which contributes approximately 100 nV/√Hz. By comparison, contribution by the op amp is negligible. Figure 7 shows the 0.1 Hz to 10 Hz noise of a typical AD586. The noise measurement is made with a band-pass filter made of a 1-pole high-pass filter with a corner frequency at 0.1 Hz, and a 2-pole low-pass filter with a corner frequency at 12.6 Hz, to create a filter with a 9.922 Hz bandwidth. If further noise reduction is desired, an external capacitor can be added between the noise reduction pin and ground, as shown in Figure 6. This capacitor, combined with the 4 kΩ RS and the Zener resistances, forms a low-pass filter on the output of the Zener cell. A 1 µF capacitor will have a 3 dB point at 12 Hz, and will reduce the high frequency (to 1 MHz) noise to about 160 µV p-p. Figure 8 shows the 1 MHz noise of a typical AD586, both with and without a 1 µF capacitor. 1 µF 5s 1 µF Figure 7. 0.1 Hz to 10 Hz Noise |
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