M29W800DT70N6 datasheet(40/41 Pages) STMICROELECTRONICS

Part #	M29W800DT70N6

Description	8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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M29W800DT, M29W800DB

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REVISION HISTORY

Table 30. Document Revision History

Version

Revision Details

August 2001

1.0

First Issue

03-Dec-2001

2.0

Block Protection Appendix added, SO44 drawing and package mechanical data updated,

CFI Table 26, address 39h/72h data clarified, Read/Reset operation during Erase

Suspend clarified

01-Mar-2002

3.0

Description of Ready/Busy signal clarified (and Figure 15 modified)

Clarified allowable commands during block erase

Clarified the mode the device returns to in the CFI Read Query command section

11-Apr-2002

4.0

Temperature range 1 added

Document promoted from Preliminary Data to full Data Sheet

31-Mar-2003

4.1

Erase Suspend Latency Time (typical and maximum) and Data Retention parameters

added to Table 6, Program, Erase Times and Program, Erase Endurance Cycles, and

Typical after 100k W/E Cycles column removed. Minimum voltage corrected for 70ns

Speed Class in Table 9, Operating and AC Measurement Conditions.

Logic Diagram and Data Toggle Flowchart corrected.

Lead-free package options E and F added to Table 20, Ordering Information Scheme.

13-Feb-2004

5.0

TSOP48 package Outline and Mechanical Data updated.

TFBGA48 6x8mm – 6x8 active ball array – 0.80mm pitch added.

Table 9.Operating and AC Measurement Conditions updated for 70ns speed option.

23-Apr-2004

6.0

Figure 3., SO Connections updated.

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Numonyx B.V	M29W800DT70N6E	1Mb / 52P	8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
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