 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
M29W800DT70N6 Datasheet(PDF) 10 Page - STMicroelectronics |
|
||||||||||||||||||||||||||||||
M29W800DT70N6 Datasheet(HTML) 10 Page - STMicroelectronics |
|
|
10 / 41 page  M29W800DT, M29W800DB 10/41 SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect- ed to this device. Address Inputs (A0-A18). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. During Bus Write opera- tions they control the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ0-DQ7). The Data In- puts/Outputs output the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ8-DQ14). The Data In- puts/Outputs output the data stored at the selected address during a Bus Read operation when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high impedance. During Bus Write operations the Command Register does not use these bits. When reading the Status Register these bits should be ignored. Data Input/Output or Address Input (DQ15A- 1). When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14). When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the LSB of the Word on the other addresses, DQ15A–1 High will select the MSB. Throughout the text consider references to the Data Input/Output to include this pin when BYTE is High and references to the Address In- puts to include this pin when BYTE is Low except when stated explicitly otherwise. Chip Enable (E). The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write op- erations to be performed. When Chip Enable is High, VIH, all other pins are ignored. Output Enable (G). The Output Enable, G, con- trols the Bus Read operation of the memory. Write Enable (W). The Write Enable, W, controls the Bus Write operation of the memory’s Com- mand Interface. Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, VIL, for at least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last. See the Ready/Busy Output section, Table 15 and Figure 15, Reset/ Temporary Unprotect AC Characteristics for more details. Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from VIH to VID must be slower than tPHPHH. Ready/Busy Output (RB). The Ready/Busy pin is an open-drain output that can be used to identify when the device is performing a Program or Erase operation. During Program or Erase operations Ready/Busy is Low, VOL. Ready/Busy is high-im- pedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy be- comes high-impedance. See Table 15 and Figure 15, Reset/Temporary Unprotect AC Characteris- tics. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus modes of the memory. When Byte/Word Organization Se- lect is Low, VIL, the memory is in 8-bit mode, when it is High, VIH, the memory is in 16-bit mode. VCC Supply Voltage. The VCC Supply Voltage supplies the power for all operations (Read, Pro- gram, Erase etc.). The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout Voltage, VLKO. This prevents Bus Write operations from ac- cidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memo- ry contents being altered will be invalid. A 0.1µF capacitor should be connected between the VCC Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations, ICC3. Vss Ground. The VSS Ground is the reference for all voltage measurements. |
Similar Part No. - M29W800DT70N6 |
|
Similar Description - M29W800DT70N6 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
