M29W800DT70N6 datasheet(1/41 Pages) STMICROELECTRONICS

Part #	M29W800DT70N6

Description	8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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April 2004

M29W800DT

M29W800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

–VCC = 2.7V to 3.6V for Program, Erase

and Read

■

ACCESS TIME: 70, 90ns

■

PROGRAMMING TIME

–

10µs per Byte/Word typical

■

19 MEMORY BLOCKS

–

1 Boot Block (Top or Bottom Location)

–

2 Parameter and 16 Main Blocks

■

PROGRAM/ERASE CONTROLLER

–

Embedded Byte/Word Program

algorithms

■

ERASE SUSPEND and RESUME MODES

–

Read and Program another Block during

Erase Suspend

■

UNLOCK BYPASS PROGRAM COMMAND

–

Faster Production/Batch Programming

■

TEMPORARY BLOCK UNPROTECTION

MODE

■

COMMON FLASH INTERFACE

–

64 bit Security Code

■

LOW POWER CONSUMPTION

–

Standby and Automatic Standby

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 0020h

–

Top Device Code M29W800DT: 22D7h

–

Bottom Device Code M29W800DB:

225Bh

Figure 1. Packages

TSOP48 (N)

12 x 20mm

TFBGA48 (ZA)

6 x 9 mm

FBGA

SO44 (M)

TFBGA48 (ZE)

6 x 8mm

FBGA

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M29W800DT70N6 Datasheet(PDF) 1 Page - STMicroelectronics

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