LM555

SNAS548C – FEBRUARY 2000 – REVISED MARCH 2013

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Connection Diagram

Top View

Figure 1. PDIP, SOIC,

and VSSOP Packages

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

+18V

1180 mW

LM555CMM

613 mW

Operating Temperature Ranges

LM555C

0°C to +70°C

Storage Temperature Range

−65°C to +150°C

Soldering Information

PDIP Package

Soldering (10 Seconds)

260°C

Small Outline Packages

(SOIC and VSSOP)

Vapor Phase (60 Seconds)

215°C

Infrared (15 Seconds)

220°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical

specifications under particular test conditions which ensures specific performance limits. This assumes that the device is within the

Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication

of device performance.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(3)

For operating at elevated temperatures the device must be derated above 25°C based on a +150°C maximum junction temperature and

a thermal resistance of 106°C/W (PDIP), 170°C/W (S0IC-8), and 204°C/W (VSSOP) junction to ambient.

(4)

Refer to RETS555X drawing of military LM555H and LM555J versions for specifications.

2

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