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MPSA92 Datasheet(PDF) 1 Page - Motorola, Inc |
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MPSA92 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 4 page ![]() 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol MPSA92 MPSA93 Unit Collector – Emitter Voltage VCEO –300 –200 Vdc Collector – Base Voltage VCBO –300 –200 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) MPSA92 MPSA93 V(BR)CEO –300 –200 — — Vdc Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) MPSA92 MPSA93 V(BR)CBO –300 –200 — — Vdc Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) V(BR)EBO –5.0 — Vdc Collector Cutoff Current (VCB = –200 Vdc, IE = 0) MPSA92 (VCB = –160 Vdc, IE = 0) MPSA93 ICBO — — –0.25 –0.25 µAdc Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) IEBO — –0.1 µAdc 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MPSA92/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPSA92 MPSA93 *Motorola Preferred Device CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3 * © Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER |
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