MURF860G datasheet(2/8 Pages) ONSEMI

Part #	MURF860G

Description	ULTRAFAST RECTIFIERS 8.0 AMPERES, 50??00 VOLTS

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Manufacturer	ONSEMI [ON Semiconductor]

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MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,

SUR8820G, SUR8840G

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2

MAXIMUM RATINGS

Rating

Symbol

MUR/SUR8

Unit

805

810

815

820

840

860

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

50

100

150

200

400

600

V

Average Rectified Forward Current

Total Device, (Rated VR), TC = 150°C

IF(AV)

8.0

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz), TC = 150°C

IFM

16

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

100

A

Operating Junction Temperature and Storage Temperature Range

TJ, Tstg

−65 to +175

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

MUR/SUR8

Unit

805

810

815

820

840

860

Maximum Thermal Resistance, Junction−to−Case

RqJC

3.0

2.0

°C/W

Thermal Resistance, Junction−to−Case

MURF860

RqJC

4.75

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

73

°C/W

Thermal Resistance, Junction−to−Ambiente

MURF860

RqJA

75

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

MUR/SUR8

Unit

805

810

815

820

840

860

Maximum Instantaneous Forward Voltage (Note 1)

(iF = 8.0 A, TC = 150°C)

(iF = 8.0 A, TC = 25°C)

vF

0.895

0.975

1.00

1.30

1.20

1.50

V

Maximum Instantaneous Reverse Current (Note 1)

(Rated DC Voltage, TJ = 150°C)

(Rated DC Voltage, TJ = 25°C)

iR

250

5.0

500

10

mA

Maximum Reverse Recovery Time

(IF = 1.0 A, di/dt = 50 A/ms)

(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)

trr

35

25

60

50

ns

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

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