©2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDP33N25 / FDPF33N25T Rev. B

October

UniFET

TM

FDP33N25 / FDPF33N25T

250V N-Channel MOSFET

Features

• Low gate charge ( typical 36.8 nC)

• Low Crss ( typical 39 pF)

•Fast switching

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

Absolute Maximum Ratings

Symbol

Parameter

FDP33N25

FDPF33N25T

Unit

Drain-Source Voltage

250

V

Drain Current

33

20.4

33*

20.4*

A

A

Drain Current

- Pulsed

(Note 1)

132

132*

A

Gate-Source voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

918

mJ

Avalanche Current

(Note 1)

33

A

Repetitive Avalanche Energy

(Note 1)

23.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

235

1.89

37

0.29

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

FDP33N25

FDPF33N25T

Unit

Thermal Resistance, Junction-to-Case

0.53

3.4

°C/W

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W