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W9412G2IB4 Datasheet(PDF) 8 Page - Winbond |
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W9412G2IB4 Datasheet(HTML) 8 Page - Winbond |
8 / 50 page W9412G2IB Publication Release Date: Aug. 30, 2010 - 8 - Revision A06 BALL DESCRIPTION, continued BALL LOCATION PIN NAME FUNCTION DESCRIPTION D4,D6,D7,D9, E5~E8,F5~F8,G5~ G8,H5~H8,J5~J8,K 4,K9 VSS Ground Ground for logic circuit inside DDR SDRAM. B2,B4,B6,B7, B9,B11,D2,D11,E3, E10,F3,F10,H3,H10 ,J3,J10 VDDQ Power ( + 2.5V ) for I/O buffer Separated power from VDD, used for output buffer, to improve noise immunity. A3,A10,C3~C5, C8~C10,D5,D8,E4, E9,F4,F9,G4,G9,H4 ,H9,J4,J9 VSSQ Ground for I/O buffer Separated ground from VSS, used for output buffer, to improve noise immunity. B3,B10,G3,G10,K1 1,K12,L2,L3,L12,M 2 NC No Connection No connection K8,L9 RFU No Connection Reserved for Future Use. |
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