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AP3989P Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

Part # AP3989P
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP3989P Datasheet(HTML) 3 Page - Advanced Power Electronics Corp.

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Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP3989P
0.8
0.9
1
1.1
1.2
1.3
-50
0
50
100
150
T j , Junction Temperature (
o C)
0
4
8
12
16
20
0
4
8
1216
2024
V DS , Drain-to-Source Voltage (V)
T C =25
o C
10V
7.0V
6.0V
5.0V
V G =4.0V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50
0
50
100
150
T j , Junction Temperature (
o C )
I D =5A
V G =10V
0
2
4
6
8
10
0
4
8
1216
2024
V DS , Drain-to-Source Voltage (V)
T C =150
o C
10V
7 .0V
6 .0V
5.0V
V G =4 0V
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
T j = 150
o CT
j = 25
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)


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