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AP3989P Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # AP3989P
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP3989P Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP3989P
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
4
8
12
16
0
204060
Q G , Total Gate Charge (nC)
I D =9A
V DS =480V
0
800
1600
2400
3200
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
Operation in this
area limited by
RDS(ON)


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