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BCW61A Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BCW61A Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 3 page  BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25 °°C) • Refer to KS5086 for graphs ELECTRICAL CHARACTERISTICS (TA=25 °°C) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature VCBO VCEO VEBO IC PC TSTG -32 -32 -5.0 -100 350 -55 ~ 150 V V V mA mW °C Characteristic Symbol Test Conditions Min Max Unit Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Noise Figure Turn On Time Turn Off Time BVCEO BVEBO ICES hFE VCE (sat) VBE (sat) VBE (on) COB NF tON tOFF IC= -2mA, IB=0 IE= -1 µA, I C=0 VCB= -32V, VBE=0 VCE= -5V, IC= -10 µA VCE= -5V, IC= -2mA VCE= -5V, IC= -50mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA VCB= -10V, IE=0 f=1MHz IC= -0.2mA, VCE= -5V RG=20K Ω, f=1KHz IC= -10mA, IB1= -1mA VBB= -3.6V, IB2= -1mA R1=R2=50K Ω, R L=990 Ω -32 -5 20 40 100 120 140 250 380 60 80 100 100 0.68 0.6 0.6 -20 220 310 460 630 -0.55 -0.25 1.05 0.85 0.75 6 6 150 800 V V nA V V V V V pF dB ns ns SOT-23 1. Base 2. Emitter 3. Collector ©1999 Fairchild Semiconductor Corporation Rev. B |
Similar Part No. - BCW61A |
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Similar Description - BCW61A |
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