S29AL016J70TFI020 datasheet(52/58 Pages) SPANSION

Part #	S29AL016J70TFI020

Description	CMOS 3.0 Volt-only Boot Sector Flash Memory

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S29AL016J

S29AL016J_00_12 April 12, 2012

Da ta

Sh e e t

18. Erase and Programming Performance

Notes

1. Typical program and erase times assume the following conditions: 25

° C, V

CC = 3.0 V, 100,000 cycles, checkerboard data pattern.

2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster

than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10.1

on page 34 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.

19. TSOP and BGA Pin Capacitance

Notes

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.5

10

s

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

16

s

Byte Programming Time

6

150

µs

Excludes system level

overhead (Note 5)

Word Programming Time

6

150

µs

Chip Programming Time

(Note 3)

Byte Mode

21.6

160

s

Word Mode

6.3

120

s

Parameter Symbol

Parameter Description

Test Setup

Package

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

TSOP

4

6

pF

BGA

4

6

COUT

Output Capacitance

VOUT = 0

TSOP

4.5

5.5

BGA

4.5

5.5

CIN2

Control Pin Capacitance

VIN = 0

TSOP

5

6.5

BGA

5

6.5

CIN3

WP# Pin Capacitance

VIN = 0

TSOP

8.5

10

BGA

8.5

10

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