S29AL016J70TFI020 datasheet(31/58 Pages) SPANSION

Part #	S29AL016J70TFI020

Description	CMOS 3.0 Volt-only Boot Sector Flash Memory

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Manufacturer	SPANSION [SPANSION]

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April 12, 2012 S29AL016J_00_12

S29AL016J

31

Data

She e t

Figure 10.1 Program Operation

Note

See Table 10.1 on page 34 for program command sequence.

10.7

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock

cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase

command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to

preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire

memory for an all zero data pattern prior to electrical erase. The system is not required to provide any

controls or timings during these operations. Table 10.1 on page 34 shows the address and data requirements

for the chip erase command sequence.

Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware

reset during the chip erase operation immediately terminates the operation. The Chip Erase command

sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity.

The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See Write

Operation Status on page 35 for information on these status bits. When the Embedded Erase algorithm is

complete, the device returns to reading array data and addresses are no longer latched.

Figure 10.2 on page 33 illustrates the algorithm for the erase operation. See Erase/Program Operations

on page 46 for parameters, and Figure 17.6 on page 47 for timing diagrams.

START

Write Program

Command Sequence

Data Poll

from System

Verify Data?

No

Yes

Last Address?

No

Yes

Programming

Completed

Increment Address

Embedded

Program

algorithm

in progress

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