E

28F200B5, 28F004/400B5, 28F800B5

39

PRELIMINARY

5.11

AC Characteristics—Write Operations—Automotive Temperature

Speed

-80

-90

#

Sym

Parameter

Note

Min

Max

Min

Max

Unit

W0

Write Cycle Time

2,4 Mbit

80

n/a

ns

8 Mbit

80

90

ns

W1

RP# High Recovery to WE#

(CE#) Going Low

450

450

ns

W2

CE# (WE#) Setup to WE#

(CE#) Going Low

00

ns

W3

Write Pulse Width

9

60

60

ns

W4

Data Setup to WE# (CE#)

Going High

460

60

ns

W5

Address Setup to WE# (CE#)

Going High

360

60

ns

W6

CE# (WE#) Hold from WE#

(CE#) High

00

ns

W7

Data Hold from WE# (CE#)

High

40

0

ns

W8

Address Hold from WE# (CE#)

High

30

0

ns

W9

Write Pulse Width

High

± 5%

10

10

ns

W10

Going High

6,8

100

100

ns

W11

High

5,8

100

100

ns

W12

6,8

0

0

ns

W13

5,8

0

0

ns

W14

Boot Block Lock Delay

7,8

100

100

ns

NOTES:

1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to

AC

Characteristics—Read-Only Operations.

2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally

which includes verify operations.

3. Refer to command definition table for valid A

4. Refer to command definition table for valid D

5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1).

6. For boot block program/erase, RP# should be held at V

successfully.

7. Time t

8. Sampled, but not 100% tested.