28F200B5, 28F004/400B5, 28F800B5

E

38

PRELIMINARY

5.10

AC Characteristics—Write Operations—Commercial and Extended

Temperature

Comm

Extended

#

Sym

Parameter

Note

Min

Max

Min

Max

Unit

W1

RP# High Recovery to WE# (CE#) Going

Low

450

450

ns

W2

CE# (WE#) Setup to WE# (CE#) Going

Low

00

ns

W3

Write Pulse Width

9

50

60

ns

W4

Data Setup to WE# (CE#) Going High

4

50

60

ns

W5

Address Setup to WE# (CE#) Going High

3

50

60

ns

W6

CE# (WE#) Hold from WE# (CE#) High

0

0

ns

W7

Data Hold from WE# (CE#) High

4

0

0

ns

W8

Address Hold from WE# (CE#) High

3

0

0

ns

W9

Write Pulse Width High

± 5%

10

10

ns

±

10%

20

20

ns

6,8

100

100

ns

5,8

100

100

ns

6,8

0

0

ns

5,8

0

0

ns

Boot Block Lock Delay

7,8

100

100

ns

NOTES:

1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to

AC

Characteristics—Read-Only Operations.

2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally

which includes verify operations.

3. Refer to command definition table for valid A

4. Refer to command definition table for valid D

5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1).

6. For boot block program/erase, RP# should be held at V

successfully.

7. Time t

8. Sampled, but not 100% tested.