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AB28F800B5T80 Datasheet(PDF) 37 Page - Intel Corporation |
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AB28F800B5T80 Datasheet(HTML) 37 Page - Intel Corporation |
37 / 44 page ![]() E 28F200B5, 28F004/400B5, 28F800B5 37 PRELIMINARY 5.9 Erase and Program Timings—Automotive Temperature VCC = 5 V ± 10% VPP 5 V ± 10% 12 V ± 5% Parameter Typ Max Typ Max Units Boot/Parameter Block Erase Time 0.6 7.8 0.34 4.0 s Main Block Erase Time 1.0 15.4 0.8 7.1 s Main Block Write Time (Byte Mode) 2.0 16.8 1.4 6.8 s Main Block Write Time (Word Mode) 1.3 8.4 0.9 3.4 s NOTES: 1. All numbers are sampled, not 100% tested. 2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value independent of VCC and VPP. See Note 3 for typical conditions. 3. Typical conditions are 25 °C with VCC and VPP at the center of the specified voltage range. Production programming using VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time. 4. Contact your Intel representative for information regarding maximum byte/word write specifications. 5. Max program times are guaranteed for the two parameter blocks and 96-KB main block only. |
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