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AB28F800B5T80 Datasheet(PDF) 36 Page - Intel Corporation

Part # AB28F800B5T80
Description  5 VOLT BOOT BLOCK FLASH MEMORY
Download  44 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

AB28F800B5T80 Datasheet(HTML) 36 Page - Intel Corporation

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28F200B5, 28F004/400B5, 28F800B5
E
36
PRELIMINARY
Address Stable
Device and
Address Selection
IH
V
IL
V
ADDRESSES (A)
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
CE# (E)
OE# (G)
WE# (W)
DATA (D/Q)
IH
V
IL
V
RP#(P)
OL
V
OH
V
High Z
Valid Output
Data
Valid
Standby
High Z
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
0599-14
Figure 15. AC Waveforms for Read Operations
5.8
Erase and Program Timings—Commercial and Extended Temperature
VCC = 5 V ± 10%
Temp
Commercial
Extended
VPP
5 V ± 10%
12 V ± 5%
5 V ± 10%
12 V ± 5%
Parameter
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Units
Boot/Parameter Block Erase Time
7
7
7
7
s
Main Block Erase Time
14
14
14
14
s
Main Block Write Time (Byte Mode)
s
Main Block Write Time (Word Mode)
s
Byte Program Time
100
100
100
100
µs
Word Program Time
100
100
100
100
µs
NOTES:
1.
All numbers are sampled, not 100% tested.
2.
Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of VCC and VPP. See Note 3 for typical conditions.
3.
Typical conditions are 25 °C with VCC and VPP at the center of the specified voltage range. Production programming using
VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.
4.
Contact your Intel representative for information regarding maximum byte/word write specifications.
5.
Max program times are guaranteed for the two parameter blocks and 96-KB main block only.


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