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AB28F800B5T80 Datasheet(PDF) 35 Page - Intel Corporation |
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AB28F800B5T80 Datasheet(HTML) 35 Page - Intel Corporation |
35 / 44 page E 28F200B5, 28F004/400B5, 28F800B5 35 PRELIMINARY 5.7 AC Characteristics—Read Operations—Automotive Temperature Speed –80 –90 # Sym Parameter Density VCC 5 V ± 10%(5) 5 V ± 10%(5) Unit Load 100 pF 100 pF Notes Min Max Min Max R1 tAVAV Read Cycle Time 2, 4 Mbit 80 n/a ns 8 Mbit 80 90 ns R2 tAVQV Address to Output Delay 2, 4 Mbit 80 n/a ns 8 Mbit 80 90 ns R3 tELQV CE# to Output Delay 2, 4 Mbit 2 80 n/a ns 8 Mbit 80 90 ns R4 tGLQV OE# to Output Delay 2 40 40 ns R5 tPHQV RP# to Output Delay 550 550 ns R6 tELQX CE# to Output in Low Z 3 0 0 ns R7 tGLQX OE# to Output in Low Z 3 0 0 ns R8 tEHQZ CE# to Output in High Z 3 25 25 ns R9 tGHQZ OE# to Output in High Z 3 25 25 ns R10 tOH Output Hold from Address, CE#, or OE# Change, Whichever Occurs First 30 0 ns NOTES: 1. See AC Input/Output Reference Waveform for timing measurements. 2. OE# may be delayed up to tCE–tOE after the falling edge of CE# without impact on tCE. 3. Sampled, but not 100% tested. 4. See Test Configuration (Figure 13), 5 V High-Speed Test component values. 5. See Test Configuration (Figure 13), 5 V Standard Test component values. 6. Dynamic BYTE# switching between word and byte modes is not supported. Mode changes must be made when the device is in deep power-down or powered down. 7. As of the publication date of this document, not all 28F200B5 –60 devices meet the 55 ns read specification. Please refer to the 5 Volt Boot Block Flash Memory Family 28F200B5, 28F004/400B5, 28F800B5 Specification Updateto determine the specific 28F200B5 –T/B60 material that is capable of 55 ns read access times. All other 28F200B5 T/B60 devices are capable of 60 ns read access times when VCC = 5 V ± 5% and 30 pF load. |
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