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AB28F800B5T80 Datasheet(PDF) 35 Page - Intel Corporation

Part # AB28F800B5T80
Description  5 VOLT BOOT BLOCK FLASH MEMORY
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

AB28F800B5T80 Datasheet(HTML) 35 Page - Intel Corporation

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E
28F200B5, 28F004/400B5, 28F800B5
35
PRELIMINARY
5.7
AC Characteristics—Read Operations—Automotive Temperature
Speed
–80
–90
#
Sym
Parameter
Density
VCC
5 V
± 10%(5) 5 V ± 10%(5)
Unit
Load
100 pF
100 pF
Notes
Min
Max
Min
Max
R1
tAVAV
Read Cycle Time
2, 4 Mbit
80
n/a
ns
8 Mbit
80
90
ns
R2
tAVQV
Address to Output Delay
2, 4 Mbit
80
n/a
ns
8 Mbit
80
90
ns
R3
tELQV
CE# to Output Delay
2, 4 Mbit
2
80
n/a
ns
8 Mbit
80
90
ns
R4
tGLQV
OE# to Output Delay
2
40
40
ns
R5
tPHQV
RP# to Output Delay
550
550
ns
R6
tELQX
CE# to Output in Low Z
3
0
0
ns
R7
tGLQX
OE# to Output in Low Z
3
0
0
ns
R8
tEHQZ
CE# to Output in High Z
3
25
25
ns
R9
tGHQZ
OE# to Output in High Z
3
25
25
ns
R10
tOH
Output Hold from Address, CE#, or OE#
Change, Whichever Occurs First
30
0
ns
NOTES:
1.
See AC Input/Output Reference Waveform for timing measurements.
2.
OE# may be delayed up to tCE–tOE after the falling edge of CE# without impact on tCE.
3.
Sampled, but not 100% tested.
4.
See
Test Configuration (Figure 13), 5 V High-Speed Test component values.
5.
See
Test Configuration (Figure 13), 5 V Standard Test component values.
6.
Dynamic BYTE# switching between word and byte modes is not supported. Mode changes must be made when the device
is in deep power-down or powered down.
7.
As of the publication date of this document, not all 28F200B5 –60 devices meet the 55 ns read specification. Please refer
to the
5 Volt Boot Block Flash Memory Family 28F200B5, 28F004/400B5, 28F800B5 Specification Updateto determine
the specific 28F200B5 –T/B60 material that is capable of 55 ns read access times. All other 28F200B5 T/B60 devices are
capable of 60 ns read access times when VCC = 5 V ± 5% and 30 pF load.


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