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AB28F800B5T80 Datasheet(PDF) 30 Page - Intel Corporation

Part # AB28F800B5T80
Description  5 VOLT BOOT BLOCK FLASH MEMORY
Download  44 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

AB28F800B5T80 Datasheet(HTML) 30 Page - Intel Corporation

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28F200B5, 28F004/400B5, 28F800B5
E
30
PRELIMINARY
5.5
DC Characteristics—Automotive Temperature (Continued)
Sym
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
ICCR
VCC Read Current for
Word or Byte
1,5,6
55
70
mA
TTL
VCC = VCC Max
CE# = VIL
f = 10 MHz
IOUT = 0 mA
Inputs = VIL or VIH
50
70
mA
CMOS
VCC = VCC Max
CE = VIL
f = 10 MHz (5 V)
5 MHz (3.3 V)
IOUT = 0 mA
Inputs = GND ± 0.2 V
or VCC ± 0.2 V
ICCW
VCC Program Current for
Word or Byte
1,4
25
50
mA
VPP = VPPH1 (at 5 V)
Program in Progress
20
45
mA
VPP = VPPH2 (at 12 V)
Program in Progress
ICCE
VCC Erase Current
1,4
22
45
mA
VPP = VPPH1 (at 5 V)
Block Erase in Progress
18
40
mA
VPP = VPPH2 (at 12 V)
Block Erase in Progress
ICCES
VCC Erase Suspend
Current
1,2
5
12.0
mA
CE# = VIH
Block Erase Suspend
VPP = VPPH1 (at 5 V)
IPPS
VPP Standby Current
1
± 5
± 15
µA
VPP ≤ VCC
IPPD
VPP Deep Power-Down
Current
1
0.2
10
µA
RP# = GND ± 0.2 V
IPPR
VPP Read Current
1
50
200
µA
VPP >VCC
IPPW
VPP Program Current for
Word or Byte
113
30
mA
VPP = VPPH
VPP = VPPH1 (at 5 V)
Program in Progress
825
mA
VPP = VPPH
VPP = VPPH2 (at 12 V)
Program in Progress


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