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AB28F800B5T80 Datasheet(PDF) 29 Page - Intel Corporation

Part # AB28F800B5T80
Description  5 VOLT BOOT BLOCK FLASH MEMORY
Download  44 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

AB28F800B5T80 Datasheet(HTML) 29 Page - Intel Corporation

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E
28F200B5, 28F004/400B5, 28F800B5
29
PRELIMINARY
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, T = +25 °C. These currents are valid for all
product versions (packages and speeds).
2. ICCES is specified with the device deselected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Block erases and word/byte program operations are inhibited when VPP = VPPLK, and not guaranteed in the range between
VPPH1 and VPPLK.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR to less than 1 mA typical, in static operation.
6. CMOS Inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.
5.5
DC Characteristics—Automotive Temperature
Sym
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
IIL
Input Load Current
1
± 5.0
µA
VCC = VCCMax
VIN = VCC or GND
ILO
Output Leakage Current
1
± 10
µA
VCC = VCC Max
VIN = VCC or GND
ICCS
VCC Standby Current
1,3
0.8
2.5
mA
TTL
VCC = VCC Max
CE# = VIL
f = 10 MHz
IOUT = 0 mA
Inputs = VIL or VIH
2, 4 Mbit
70
250
µA
CMOS
VCC = VCC Max
CE# = VIL
f = 10 MHz
IOUT = 0 mA
Inputs = VIL or VIH
8 Mbit
70
220
µA
ICCD
VCC Deep
Power-Down
Current
2, 4 Mbit
1
0.2
105
µA
VCC = VCC Max
VIN = VCC or GND
RP# = GND ± 0.2 V
8 Mbit
1
0.2
104.5
µA


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