AB28F800B5T80 datasheet(27/44 Pages) INTEL

Part #	AB28F800B5T80

Description	5 VOLT BOOT BLOCK FLASH MEMORY

PDF	44 Pages

Scroll/Zoom	100%

Manufacturer	INTEL [Intel Corporation]

Direct Link	http://www.intel.com

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27 / 44 page

E

28F200B5, 28F004/400B5, 28F800B5

27

PRELIMINARY

5.3

Capacitance

TA = 25 °C, f = 1 MHz

Symbol

Parameter

Note

Typ

Max

Unit

Conditions

CIN

Input Capacitance

4

6

8

pF

VIN = 0 V

COUT

Output Capacitance

4, 7

10

12

pF

VOUT = 0 V

1. Sampled, not 100% tested.

5.4

DC Characteristics—Commercial and Extended Temperature

Temp

Comm

Extended

Sym

Parameter

Note

Typ Max

Typ Max Unit

Test Condition

IIL

Input Load Current

1

±1.0

µA

VCC = VCC Max, VIN = VCC or GND

ILO

Output Leakage Current

1

± 10

µA

VCC = VCC Max, VIN = VCC or GND

ICCS

VCC Standby Current

1,3

2.0

2.5

mA

VCC = VCC Max, CE# = RP# =

BYTE# = WP# = VIH

130

150

µA

VCC = VCC Max

CE# = RP# = VCC ± 0.2 V

ICCD

VCC Deep Power-Down

Current

120

20

µA

VCC = VCC Max, VIN = VCC or GND

RP# = GND ± 0.2 V

ICCR

VCC Read Current

(Word or Byte Mode)

1,5,

6

60

65

mA

CMOS INPUTS

VCC = VCC Max, CE# = GND,

OE# = VCC, f = 10 MHz (5 V),

IOUT = 0 mA, Inputs=GND or VCC

65

70

mA

TTL INPUTS

VCC = VCC Max, CE# = VIL,

OE# = VIH , f = 10 MHz (5 V),

IOUT = 0 mA, Inputs = VIL or VIH

ICCW

VCC Program Current

1,4

50

mA

VPP = VPPH1 (at 5 V)

(Word or Byte Mode)

45

mA

VPP = VPPH2 (at 12 V)

ICCE

VCC Erase Current

1,4

35

45

mA

VPP = VPPH1 (at 5 V)

30

40

mA

VPP = VPPH2 (at 12 V)

ICCES

VCC Erase Susp Current

1,2

10

12.0

mA

CE# = VIH , Block Erase Suspend

IPPS

VPP Standby Current

1

± 10

± 15

µA

VPP < VPPH2

IPPD

VPP Deep Power-Down

Current

1

5.0

10

µA

RP# = GND ± 0.2 V

IPPR

VPP Read Current

1

200

µA

VPP

≥ VPPH2

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