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NCP1608 Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP1608 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 24 page ![]() NCP1608 http://onsemi.com 3 Table 1. PIN FUNCTION DESCRIPTION Pin Name Function 1 FB The FB pin is the inverting input of the internal error amplifier. A resistor divider scales the output voltage to VREF to main- tain regulation. The feedback voltage is used for overvoltage and undervoltage protections. The controller is disabled when this pin is forced to a voltage less than VUVP, a voltage greater than VOVP, or floating. 2 Control The Control pin is the output of the internal error amplifier. A compensation network is connected between the Control pin and ground to set the loop bandwidth. A low bandwidth yields a high power factor and a low Total Harmonic Distortion (THD). 3 Ct The Ct pin sources a current to charge an external timing capacitor. The circuit controls the power switch on time by com- paring the Ct voltage to an internal voltage derived from VControl. The Ct pin discharges the external timing capacitor at the end of the on time. 4 CS The CS pin limits the cycle−by−cycle current through the power switch. When the CS voltage exceeds VILIM, the drive turns off. The sense resistor that connects to the CS pin programs the maximum switch current. 5 ZCD The voltage of an auxiliary winding is sensed by this pin to detect the inductor demagnetization for CrM operation. 6 GND The GND pin is analog ground. 7 DRV The integrated driver has a typical source impedance of 12 W and a typical sink impedance of 6 W. 8 VCC The VCC pin is the positive supply of the controller. The controller is enabled when VCC exceeds VCC(on) and is disabled when VCC decreases to less than VCC(off). Table 2. MAXIMUM RATINGS Rating Symbol Value Unit FB Voltage VFB −0.3 to 10 V FB Current IFB ±10 mA Control Voltage VControl −0.3 to 6.5 V Control Current IControl −2 to 10 mA Ct Voltage VCt −0.3 to 6 V Ct Current ICt ±10 mA CS Voltage VCS −0.3 to 6 V CS Current ICS ±10 mA ZCD Voltage VZCD −0.3 to 10 V ZCD Current IZCD ±10 mA DRV Voltage VDRV −0.3 to VCC V DRV Sink Current IDRV(sink) 800 mA DRV Source Current IDRV(source) 500 mA Supply Voltage VCC −0.3 to 20 V Supply Current ICC ±20 mA Power Dissipation (TA = 70°C, 2.0 Oz Cu, 55 mm2 Printed Circuit Copper Clad) PD 450 mW Thermal Resistance Junction−to−Ambient (2.0 Oz Cu, 55 mm2 Printed Circuit Copper Clad) Junction−to−Air, Low conductivity PCB (Note 3) Junction−to−Air, High conductivity PCB (Note 4) RqJA RqJA RqJA 178 168 127 °C/W Operating Junction Temperature Range TJ −40 to 125 °C Maximum Junction Temperature TJ(MAX) 150 °C Storage Temperature Range TSTG −65 to 150 °C Lead Temperature (Soldering, 10 s) TL 300 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Pins 1– 8: Human Body Model 2000 V per JEDEC Standard JESD22−A114E. Pins 1– 8: Machine Model Method 200 V per JEDEC Standard JESD22−A115−A. 2. This device contains Latch−Up protection and exceeds ± 100 mA per JEDEC Standard JESD78. 3. As mounted on a 40x40x1.5 mm FR4 substrate with a single layer of 80 mm2 of 2 oz copper traces and heat spreading area. As specified for a JEDEC 51 low conductivity test PCB. Test conditions were under natural convection or zero air flow. 4. As mounted on a 40x40x1.5 mm FR4 substrate with a single layer of 650 mm2 of 2 oz copper traces and heat spreading area. As specified for a JEDEC 51 high conductivity test PCB. Test conditions were under natural convection or zero air flow. |
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