MJE5740 MJE5741 MJE5742

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)

(IC = 4 Adc, VCE = 5 Vdc)

hFE

50

200

100

400

—

—

—

Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)

VCE(sat)

—

—

—

—

—

—

2

3

2.2

Vdc

Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)

VBE(sat)

—

—

—

—

—

—

2.5

3.5

2.4

Vdc

Diode Forward Voltage (2) (IF = 5 Adc)

Vf

—

—

2.5

Vdc

SWITCHING CHARACTERISTICS

Typical Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC(pk) = 6 A

IB1 = IB2 = 0.25 A, tp = 25 µs,

Duty Cycle

v 1%)

td

—

0.04

—

µs

Rise Time

(VCC = 250 Vdc, IC(pk) = 6 A

IB1 = IB2 = 0.25 A, tp = 25 µs,

Duty Cycle

v 1%)

tr

—

0.5

—

µs

Storage Time

IB1 = IB2 = 0.25 A, tp = 25 µs,

Duty Cycle

v 1%)

ts

—

8

—

µs

Fall Time

Duty Cycle

v 1%)

tf

—

2

—

µs

Inductive Load, Clamped (Table 1)

Voltage Storage Time

(IC(pk) = 6 A, VCE(pk) = 250 Vdc

IB1 = 0.06 A, VBE(off) = 5 Vdc)

tsv

—

4

—

µs

Crossover Time

(IC(pk) = 6 A, VCE(pk) = 250 Vdc

IB1 = 0.06 A, VBE(off) = 5 Vdc)

tc

—

2

—

µs

(1) Pulse Test: Pulse Width 300

µs, Duty Cycle = 2%.

(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the

trv

IC

VCE

90% IB1

tsv

IC(pk)

VCE(pk)

90% VCE(pk)

90% IC

10% VCE(pk)

10%

IC(pk) 2% IC

IB

tfi

tti

tc

0.1

IC, COLLECTOR CURRENT (AMPS)

5

2000

VCE = 5 V

1

+ 25

°C

2

10

1000

100

10

0

TC, CASE TEMPERATURE (°C)

0

40

120

160

60

SECOND BREAKDOWN DERATING

100

80

40

20

60

100

140

80

THERMAL DERATING

Figure 1. Power Derating

Figure 2. Inductive Switching Measurements

IC, COLLECTOR CURRENT (AMPS)

2.4

1.6

0.4

Figure 3. DC Current Gain

Figure 4. Base–Emitter Voltage

2

1.2

0.8

hFE = 20

0.2

10

2

0.5

1

5

TIME

150

°C

– 55

°C

20

2.2

1.4

1.8

1

0.6

+150

°C

+ 25

°C

– 55

°C

TYPICAL CHARACTERISTICS