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Motorola Bipolar Power Transistor Device Data

NPN Silicon Power

Darlington Transistors

The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power

switching in inductive circuits. They are particularly suited for operation in applications

such as:

• Small Engine Ignition

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

MAXIMUM RATINGS

Rating

Symbol

MJE5740

MJE5741

MJE5742

Unit

Collector–Emitter Voltage

VCEO(sus)

300

350

400

Vdc

Collector–Emitter Voltage

VCEV

600

700

800

Vdc

Emitter Base Voltage

VEB

8

Vdc

Collector Current — Continuous

— Peak (1)

IC

ICM

8

16

Adc

Base Current — Continuous

— Peak (1)

IB

IBM

2.5

5

Adc

Total Power Dissipation

@ TA = 25_C

Derate above 25

_C

PD

2

16

Watts

mW/

_C

Total Power Dissipation

@ TC = 25_C

Derate above 25

_C

PD

80

640

Watts

mW/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.56

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8

″ from Case for 5 Seconds

TL

275

_C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (2)

Collector–Emitter Sustaining Voltage

MJE5740

(IC = 50 mA, IB = 0)

MJE5741

MJE5742

VCEO(sus)

300

350

400

—

—

—

—

—

—

Vdc

Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ICEV

—

—

—

—

1

5

mAdc

Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)

IEBO

—

—

75

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 6

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 7

(2) Pulse Test: Pulse Width = 300

µs, Duty Cycle = 2%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE5740/D

MJE5740

MJE5741

MJE5742

POWER DARLINGTON

TRANSISTORS

8 AMPERES

300, 350, 400 VOLTS

80 WATTS

*Motorola Preferred Device

≈ 100

≈ 50

*

*

CASE 221A–06

TO–220AB

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