MJD44H11 datasheet(2/6 Pages) MOTOROLA

Part #	MJD44H11

Description	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

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Manufacturer	MOTOROLA [Motorola, Inc]

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MJD44H11 MJD45H11

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 30 mA, IB = 0)

VCEO(sus)

80

—

Vdc

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0)

ICES

—

10

µA

Emitter Cutoff Current

(VEB = 5 Vdc)

IEBO

—

50

µA

ON CHARACTERISTICS

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc)

VCE(sat)

—

1

Vdc

Base–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

VBE(sat)

—

1.5

Vdc

DC Current Gain

(VCE = 1 Vdc, IC = 2 Adc)

hFE

60

—

DC Current Gain

(VCE = 1 Vdc, IC = 4 Adc)

40

—

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, ftest = 1 MHz)

MJD44H11

MJD45H11

Ccb

—

130

230

—

pF

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)

MJD44H11

MJD45H11

fT

—

50

40

—

MHz

SWITCHING TIMES

Delay and Rise Times

(IC = 5 Adc, IB1 = 0.5 Adc)

MJD44H11

MJD45H11

td + tr

—

300

135

—

ns

Storage Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJD44H11

MJD45H11

ts

—

500

—

ns

Fall Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJD44H11

MJD45H11

tf

—

140

100

—

ns

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