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MJD44H11 Datasheet(PDF) 1 Page - Motorola, Inc |
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MJD44H11 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 6 page ![]() 1 Motorola Bipolar Power Transistor Device Data Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix) • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage — VCE(sat) = 1.0 Volt Max @ 8.0 Amperes • Fast Switching Speeds • Complementary Pairs Simplifies Designs MAXIMUM RATINGS Rating Symbol D44H11 or D45H11 Unit Collector–Emitter Voltage VCEO 80 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC 8 16 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 20 0.16 Watts W/ _C Total Power Dissipation (1) @ TA = 25_C Derate above 25 _C PD 1.75 0.014 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 6.25 _C/W Thermal Resistance, Junction to Ambient (1) R θJA 71.4 _C/W Lead Temperature for Soldering TL 260 _C (1) These ratings are applicable when surface mounted on the minimum pad size recommended. Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D © Motorola, Inc. 1995 MJD44H11 MJD45H11 CASE 369A–13 SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS *Motorola Preferred Device CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS inches mm * NPN PNP * REV 2 |
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