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AD587JRZ-REEL7 Datasheet(PDF) 4 Page - Analog Devices |
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AD587JRZ-REEL7 Datasheet(HTML) 4 Page - Analog Devices |
4 / 12 page REV. F –4– AD587 THEORY OF OPERATION The AD587 consists of a proprietary buried Zener diode refer- ence, an amplifier to buffer the output, and several high stability thin-film resistors as shown in the block diagram in Figure 1. This design results in a high precision monolithic 10 V output reference with initial offset of 5 mV or less. The temperature compensation circuitry provides the device with a temperature coefficient of under 5 ppm/ °C. 8 2 6 4 5 RT RF RI RS AD587 A1 +VIN NOISE REDUCTION VOUT TRIM GND NOTE PINS 1, 3 AND 7 ARE INTERNAL TEST POINTS. NO CONNECTIONS TO THESE POINTS. Figure 1. Functional Block Diagram A capacitor can be added at the NOISE REDUCTION pin (Pin 8) to form a low-pass filter with RS to reduce the noise contribution of the Zener to the circuit. APPLYING THE AD587 The AD587 is simple to use in virtually all precision reference applications. When power is applied to Pin 2, and Pin 4 is grounded, Pin 6 provides a 10 V output. No external components are required; the degree of desired absolute accuracy is achieved simply by selecting the required device grade. The AD587 requires less than 4 mA quiescent current from an operating supply of 15 V. Fine trimming may be desired to set the output level to exactly 10.000 V (calibrated to a main system reference). System calibra- tion may also require a reference voltage that is slightly different from 10.000 V, for example, 10.24 V for binary applications. In either case, the optional trim circuit shown in Figure 2 can offset the output by as much as 300 mV with minimal effect on other device characteristics. 8 2 6 4 GND 5 AD587 VIN NOISE REDUCTION TRIM VO 10k OUTPUT +VIN CN 1 F OPTIONAL NOISE REDUCTION CAPACITOR Figure 2. Optional Fine Trim Configuration NOISE PERFORMANCE AND REDUCTION The noise generated by the AD587 is typically less than 4 µV p-p over the 0.1 Hz to 10 Hz band. Noise in a 1 MHz bandwidth is approximately 200 µV p-p. The dominant source of this noise is the buried Zener, which contributes approximately 100 nV/ √Hz. In comparison, the op amp’s contribution is negligible. Figure 3 shows the 0.1 Hz to 10 Hz noise of a typical AD587. The noise measurement is made with a band-pass filter made of a 1-pole high-pass filter with a corner frequency at 0.1 Hz and a 2-pole low-pass filter with a corner frequency at 12.6 Hz to create a filter with a 9.922 Hz bandwidth. Figure 3. 0.1 Hz to 10 Hz Noise If further noise reduction is desired, an external capacitor may be added between the NOISE REDUCTION pin and ground, as shown in Figure 2. This capacitor, combined with the 4k Ω R S and the Zener resistances, forms a low-pass filter on the output of the Zener cell. A 1 µF capacitor will have a 3 dB point at 40 Hz, and will reduce the high frequency (to 1 MHz) noise to about 160 µV p-p. Figure 4 shows the 1 MHz noise of a typi- cal AD587 both with and without a 1 µF capacitor. Figure 4. Effect of 1 µF Noise Reduction Capacitor on Broadband Noise TURN-ON TIME Upon application of power (cold start), the time required for the output voltage to reach its final value within a specified error band is defined as the turn-on settling time. Two components normally associated with this are the time for the active circuits to settle, and the time for the thermal gradients on the chip to stabilize. Figure 5 shows the turn-on characteristics of the AD587. It shows the settling to be about 60 µs to 0.01%. Note the absence of any thermal tails when the horizontal scale is expanded to 1ms/cm in Figure 5b. |
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