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AD586LR Datasheet(PDF) 3 Page - Analog Devices |
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AD586LR Datasheet(HTML) 3 Page - Analog Devices |
3 / 8 page ![]() AD586 REV. C –3– The following specifications are tested at the die level for AD586JCHIPS. These die are probed at 25 C only. (TA = +25 C, VIN = +15 V unless otherwise noted) DlE SPECIFlCATIONS AD586JCHIPS Parameter Min Typ Max Units Output Voltage 4.980 5.020 V Gain Adjustment +6 % –2 % Line Regulation 10.8 V < + VIN < 36 V 100 ±µV/V Load Regulation Sourcing 0 < IOUT < 10 mA 100 µV/mA Sinking –10 < IOUT < 0 mA 400 µV/mA Quiescent Current 3 mA Short-Circuit Current-to-Ground 60 mA NOTES 1Both V OUT pads should be connected to the output. Die Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 mils. Die Dimensions: The dimensions given have a tolerance of ± 2 mils. Backing: The standard backside surface is silicon (not plated). Analog Devices does not recommend gold-backed dice for most applications. Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular edges half-way through the die. In contrast to scribed dice, this technique provides a more uniform die shape and size. The perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape and size simplifies substrate design and die attach. Top Surface: The standard top surface of the die is covered by a layer of glassivation. All areas are covered except bonding pads and scribe lines. Surface Metalization: The metalization to Analog Devices bipolar dice is aluminum. Minimum thickness is 10,000Å. Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivation windows have 3.5 mils by 3.5 mils minimum. WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD586 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ORDERING GUIDE Initial Temperature Temperature Package Model 1 Error Coefficient Range Option 2 AD586JN 20 mV 25 ppm/ °C0°C to +70°C N-8 AD586JQ 20 mV 25 ppm/ °C0°C to +70°C Q-8 AD586JR 20 mV 25 ppm/ °C0°C to +70°C SO-8 AD586KN 5 mV 15 ppm/ °C0°C to +70°C N-8 AD586KQ 5 mV 15 ppm/ °C0°C to +70°C Q-8 AD586KR 5 mV 15 ppm/ °C0°C to +70°C SO-8 AD586LN 2.5 mV 5 ppm/ °C0°C to +70°C N-8 AD586LR 2.5 mV 5 ppm/ °C0°C to +70°C SO-8 AD586MN 2 mV 2 ppm/ °C0°C to +70°C N-8 AD586AR 5 mV 15 ppm/ °C–40°C to +85°C SO-8 AD586BR 2.5 mV 5 ppm/ °C–40°C to +85°C SO-8 AD586LQ 2.5 mV 5 ppm/ °C0°C to +70°C Q-8 AD586SQ 10 mV 20 ppm/ °C –55 °C to +125°C Q-8 AD586TQ 2.5 mV 10 ppm/ °C –55 °C to +125°C Q-8 AD586JCHIPS 20 mV 25 ppm/ °C0°C to +70°C NOTES 1For details on grade and package offerings screened in accordance with MIL-STD-883, r efer to the Analog Devices Military Products Databook or current AD586/883B data sheet. 2N = Plastic DIP; Q = Cerdip; SO = Small Outline IC (SOIC). |
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