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BSS84WT1 Datasheet(PDF) 1 Page - WILLAS ELECTRONIC CORP |
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BSS84WT1 Datasheet(HTML) 1 Page - WILLAS ELECTRONIC CORP |
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1 / 4 page ![]() 1 SOT –323 2 3 Power MOSFET P–Channel SOT–323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. • Energy Efficient • Miniature SOT–323 Surface Mount Package Saves Board Space Symbol Value Unit Drain–to–Source Voltage VDSS 50 Vdc Gate–to–Source Voltage – Continuous VGS ± 20 Vdc Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) ID IDM 130 520 mA Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ,Tstg – 55 to 150 °C Thermal Resistance – Junction–to–Ambient RθJA 556 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C Rating MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) ° 3 Drain 1 2 - Gate Source Marking Diagram M = Month Code • Device Package Shipping ORDERING INFORMATION SOT-323 3000/Tape&Reel BSS84WT1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ, Tstg –o55 to +150 °C mAmps, 50 Volts mAmps, 50 Volts 130 PD = Device Code PD 2012-0 WILLAS ELECTRONIC CORP. BSS84WT1 Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 • • • • • • • • Package outline Mechanical data Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750 , Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) SOD-123H Pb Free Product 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE WILLAS BARRIER RECTIFIERS -20V- 200V FM120-M THRU FM1200-M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% WILLAS ELECTRONIC CORP. 201 2-06 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 13 14 15 16 18 10 115 120 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 14 21 28 35 42 56 70 105 140 20 30 40 50 60 80 100 150 200 Volts Volts Volts Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM 1.0 30 Amps Amps Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG -55 to +125 40 120 - 65 to +175 -55 to +150 ℃/W PF ℃ ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC VF 0.50 0.70 0.85 0.9 0.92 Volts @TA=25℃ 0.5 Maximum Average Reverse Current at Rated DC Blocking Voltage @TA=125℃ IR 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • • |
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