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55GN01MA Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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55GN01MA Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 8 page ![]() 55GN01MA No. A1114-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 0.1 μA Emitter Cutoff Current IEBO VEB=2V, IC=0A 1 μA DC Current Gain hFE VCE=5V, IC=10mA 100 180 Gain-Bandwidth Product fT1VCE=3V, IC=5mA 3.0 4.5 GHz fT2VCE=5V, IC=20mA 5.5 GHz Output Capacitance Cob VCB=10V, f=1MHz 1.0 1.3 pF Reverse Transfer Capacitance Cre 0.6 pF Forward Transfer Gain ⏐S21e⏐ 2 VCE=5V, IC=20mA, f=1GHz 7 10 dB Noise Figure NF VCE=3V, IC=5mA, f=1GHz, ZO=50Ω 1.9 2.8 dB Ordering Information Device Package Shipping memo 55GN01MA-TL-E MCP 3,000pcs./reel Pb Free Collector-to-Emitter Voltage, VCE -- V IC -- VCE Base-to-Emitter Voltage, VBE -- V IC -- VBE hFE -- IC f T -- IC Collector Current, IC -- mA Collector Current, IC -- mA 0123456789 10 0 5 10 15 20 25 30 35 40 45 50 IT06252 IB=0mA 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA 0 0.2 0.4 0.6 0.8 1.0 1.2 0 80 70 60 50 40 30 20 10 IT06253 VCE=5V IT06254 100 2 7 5 3 1.0 35 7 2 3 5 7 10 23 5 7 100 VCE=5V 1.0 5 7 10 2 3 1.0 23 5 7 2 3 5 7 10 100 IT05670 VCE=5V |
Similar Part No. - 55GN01MA_12 |
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