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55GN01MA Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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55GN01MA Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 8 page 55GN01MA No. A1114-1/8 Features • High cut-off frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐ 2=10dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 3V Collector Current IC 70 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2×0.8mm) 400 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions unit : mm (typ) 7023A-009 Ordering number : ENA1114A 71112 TKIM/O2908AB MSIM TC-00001677 55GN01MA NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications http://semicon.sanyo.com/en/network SANYO Semiconductors DATA SHEET Product & Package Information • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection ZD LOT No. LOT No. TL 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 3 12 2.0 0.65 0.3 0 to 0.08 0.15 55GN01MA-TL-E 3 2 1 |
Similar Part No. - 55GN01MA_12 |
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Similar Description - 55GN01MA_12 |
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