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RT8525D Datasheet(PDF) 10 Page - Richtek Technology Corporation

Part # RT8525D
Description  Current Mode Boost Controller
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Manufacturer  RICHTEK [Richtek Technology Corporation]
Direct Link  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT8525D Datasheet(HTML) 10 Page - Richtek Technology Corporation

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RT8525D
www.richtek.com
DS8525D-00 June 2012
©
Copyright 2012 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
⎡⎤
⎛⎞ ⎛
×
+ Δ−
+
− Δ−
×
⎜⎟ ⎜
⎢⎥
⎝⎠ ⎝
⎣⎦
×× Δ
IN
IN
L
OUT
IN
L
OUT
OUT
OUT
OUT1
SW
V
11
1
Q =
I
I
I
I
I
I
22
2
V
1 = C
V
f
where fSW is the switching frequency, and
ΔIL is the
inductor ripple current. Move COUT to the left side to
estimate the value of
ΔVOUT1 as the following equation :
×
Δ
××
η
OUT
OUT1
OUT
SW
DI
V
=
Cf
Finally, by taking ESR into consideration, the overall output
ripple voltage can be determined as the following
equation :
×
Δ×
+
××
OUT
OUT
IN
OUT
SW
DI
V
= I
ESR
η Cf
Figure 3. The Output Ripple Voltage without the
Contribution of ESR
Diode Selection
Schottky diodes are recommended for most applications
because of their fast recovery time and low forward voltage.
The power dissipation, reverse voltage rating and pulsating
peak current are the important parameters for Schottky
diode selection. Make sure that the diode's peak current
rating exceeds ILPK, and reverse voltage rating exceeds
the maximum output voltage.
Capacitor Selection
Output ripple voltage is an important index for estimating
the performance. This portion consists of two parts, one
is the product of input current and ESR of output capacitor,
another part is formed by charging and discharging
process of output capacitor. Refer to figure 3, evaluate
ΔVOUT1 by ideal energy equalization. According to the
definition of Q, the Q value can be calculated as following
equation :
Time
Time
Inductor Current
Output Current
Output Ripple
Voltage (ac)
(1-D)TS
Δ
VOUT1
Δ
IL
Input Current
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX)
− TA) / θJA
where TJ(MAX) is the maximum junction temperature, TAis
the ambient temperature, and
θJAis the junction to ambient
thermal resistance.
For recommended operating condition specifications, the
maximum junction temperature is 125
°C. The junction to
ambient thermal resistance,
θJA, is layout dependent. For
WDFN-12L 3x3 package, the thermal resistance,
θJA, is
60
°C/W on a standard JEDEC 51-7 four-layer thermal test
board. The maximum power dissipation at TA = 25
°C can
be calculated by the following formula :
PD(MAX) = (125
°C − 25°C) / (60°C/W) = 1.667W for
WDFN-12L 3x3 package
The maximum power dissipation depends on the operating
ambient temperature for fixed TJ(MAX) and thermal


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