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RT8525D Datasheet(PDF) 10 Page - Richtek Technology Corporation |
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RT8525D Datasheet(HTML) 10 Page - Richtek Technology Corporation |
10 / 12 page 10 RT8525D www.richtek.com DS8525D-00 June 2012 © Copyright 2012 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. ⎡⎤ ⎛⎞ ⎛ ⎞ × + Δ− + − Δ− × ⎜⎟ ⎜ ⎟ ⎢⎥ ⎝⎠ ⎝ ⎠ ⎣⎦ ×× Δ IN IN L OUT IN L OUT OUT OUT OUT1 SW V 11 1 Q = I I I I I I 22 2 V 1 = C V f where fSW is the switching frequency, and ΔIL is the inductor ripple current. Move COUT to the left side to estimate the value of ΔVOUT1 as the following equation : × Δ ×× η OUT OUT1 OUT SW DI V = Cf Finally, by taking ESR into consideration, the overall output ripple voltage can be determined as the following equation : × Δ× + ×× OUT OUT IN OUT SW DI V = I ESR η Cf Figure 3. The Output Ripple Voltage without the Contribution of ESR Diode Selection Schottky diodes are recommended for most applications because of their fast recovery time and low forward voltage. The power dissipation, reverse voltage rating and pulsating peak current are the important parameters for Schottky diode selection. Make sure that the diode's peak current rating exceeds ILPK, and reverse voltage rating exceeds the maximum output voltage. Capacitor Selection Output ripple voltage is an important index for estimating the performance. This portion consists of two parts, one is the product of input current and ESR of output capacitor, another part is formed by charging and discharging process of output capacitor. Refer to figure 3, evaluate ΔVOUT1 by ideal energy equalization. According to the definition of Q, the Q value can be calculated as following equation : Time Time Inductor Current Output Current Output Ripple Voltage (ac) (1-D)TS Δ VOUT1 Δ IL Input Current Thermal Considerations For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : PD(MAX) = (TJ(MAX) − TA) / θJA where TJ(MAX) is the maximum junction temperature, TAis the ambient temperature, and θJAis the junction to ambient thermal resistance. For recommended operating condition specifications, the maximum junction temperature is 125 °C. The junction to ambient thermal resistance, θJA, is layout dependent. For WDFN-12L 3x3 package, the thermal resistance, θJA, is 60 °C/W on a standard JEDEC 51-7 four-layer thermal test board. The maximum power dissipation at TA = 25 °C can be calculated by the following formula : PD(MAX) = (125 °C − 25°C) / (60°C/W) = 1.667W for WDFN-12L 3x3 package The maximum power dissipation depends on the operating ambient temperature for fixed TJ(MAX) and thermal |
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