RT8206L/M

12

DS8206L/M-07 June 2012

www.richtek.com

©

Copyright 2012 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

Note 1.

Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in

the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may

affect device reliability.

Note 2.

measured at the exposed pad of the package.

Note 3.

Devices are ESD sensitive. Handling precaution is recommended.

Note 4.

The device is not guaranteed to function outside its operating conditions.

Note 5.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Logic Input

Low-Level

--

--

0.2

FB1/FB2

Input Voltage High-Level

− 1

--

--

V

Low Level (DEM Mode)

--

--

0.8

REF Level (Ultrasonic Mode)

1.8

--

2.3

SKIP Input Voltage

High Level (PWM Mode)

2.5

--

--

V

--

--

0.8

1.8

--

2.3

TON Setting Voltage

2.5

--

--

V

Clear Fault Level / SMPS Off Level

--

--

0.8

Delay Start

1.8

--

2.3

ENx Input Voltage

SMPS On Level

2.5

--

--

V

Rising Edge

1.2

1.6

2.0

ENLDO Input Voltage

Falling Edge

0.94

1

1.06

V

−1

--

3

−1

--

1

−1

--

1

−1

--

1

Input Leakage Current

−1

--

1

μA

Internal BOOT Switch

Internal Boost Charging

Switch On-Resistance

PVCC to BOOTx

--

40

80

Ω

Power MOSFET Drivers

BOOTx to PHASEx Forced to 5V, High State

--

2.5

4

UGATEx On-Resistance

BOOTx to PHASEx Forced to 5V, Low State

--

1.5

3

Ω

LGATEx, High State

--

2.2

5

LGATEx On-Resistance

LGATEx, Low State

--

0.6

1.5

Ω

LGATE Rising

--

30

--

Dead Time

UGATE Rising

--

40

--

ns