Product Brief

Published by

Infineon Technologies Austria AG

9500 Villach, Austria

© 2012 Infineon Technologies AG.

All Rights Reserved.

Visit us:

www.infineon.com

Order Number: B152-H9677-G1-X-7600-DB2012-0016

Date: 09 / 2012

AttEntion plEAsE!

The information given in this document shall in no event

be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples

or hints given herein, any typical values stated herein and/

or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warran-

ties and liabilities of any kind, including without limita-

tion warranties of non-infringement of intellectual property

rights of any third party.

informAtion

For further information on technology, delivery terms and

conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com).

WArnings

Due to technical requirements components may contain

dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies

Office. Infineon Technologies Components may only be

used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause

the failure of that life-support device or system, or to affect

the safety or effectiveness of that device or system. Life

support devices or systems are intended to be implanted

in the human body, or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reason-

able to assume that the health of the user or other persons

may be endangered.

650V SiC thinQ!™ Generation 5 diodes

Your way is our way: improve efficiency and solution costs

infineon: leading technology

planned product portfolio

An important achievement with Gen 5 is the industrial implementation of

a thinning process which allows reducing the wafer thickness to almost

1/3 while maintaining the proven quality and yield levels. The thinning

reduces the resistive contribution of the substrate (see picture on the

right) and one of its most striking benefit is a consistent improvement of

the surge current robustness, now at comparable level or even higher (for

IF <10A) than for G2 in spite of a smaller chip size.

In combination with our proprietary diffusion soldering, the reduced

thickness further contributes to decrease the overall thermal resistance

in the package. The pictures below show the temperature increase at the

junction under given forward current conditions for the same device area:

Left: 350µm chip with 60µm soft solder; middle: 350µm chip with diff.

solder; right: 110µm chip with diff. solder

Please check the single product status/availability on: www.infineon.com/sic

650V

TO-220 R2L

2A

IDH02G65C5

IDK02G65C5

IDL02G65C5

3A

IDH03G65C5

IDK03G65C5

4A

IDH04G65C5

IDK04G65C5

IDL04G65C5

5A

IDH05G65C5

IDK05G65C5

6A

IDH06G65C5

IDK06G65C5

IDL06G65C5

8A

IDH08G65C5

IDK08G65C5

IDL08G65C5

9A

IDH09G65C5

IDK09G65C5

10A

IDH10G65C5

IDW10G65C5

IDK10G65C5

IDL10G65C5

12A

IDH12G65C5

IDW12G65C5

IDK12G65C5

IDL12G65C5

16A

IDH16G65C5

IDW16G65C5

20A

IDH20G65C5

IDW20G65C5

30A

IDW30G65C5

40A

IDW40G65C5

60

50

40

30

20

10

0

0

2

4

6

8

VF [V]

G5

G2-G3

d=350µm@175°C

d=110µm@175°C