TPD4144K

2012-02-09

8

Characteristics

Symbol

Rating

Unit

500

V

Power supply voltage

18

V

Output current (DC)

2

A

Output current (pulse 1ms)

3

A

Input voltage

-0.5 to 7

V

50

mA

DIAG voltage

20

V

DIAG current

20

mA

Power dissipation

（

IGBT1 phase (Tc

= 25°C) )

36

W

Power dissipation

（

FRD1 phase (Tc

= 25°C) )

22

W

Operating junction temperature

-40 to 135

°C

Junction temperature

150

°C

Storage temperature

-55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).