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MT3S111TU Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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MT3S111TU Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page MT3S111TU 2009-03-31 3 hFE-IC IC-VBE 10 100 1000 1 10 100 COMMON EMITTER VCE=5V Ta=25°C 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 COMMON EMITTER VCE=5V Ta=25°C Collector-current IC(mA) Base-emitter voltage VBE(V) IC-VCE fT-IC 0 10 20 30 40 50 60 70 0 1 234 56 COMMON EMITTER Ta=25°C IB= 40μA 80μA 120μA 160μA 200μA 0 5 10 15 1 10 100 VCE=5V Ta=25°C Collector-emitter voltage VCE(V) Collector-current IC(mA) |S21e| 2-IC NF-IC 0 2 4 6 8 10 12 14 16 18 20 110 100 VCE=5V Ta=25°C f = 1GHz f = 500MHz 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 VCE=5V Ta=25°C f = 500MHz f = 1GHz Collector-current IC(mA) Collector-current IC(mA) |
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