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MT3S111TU Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MT3S111TU Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page MT3S111TU 2009-03-31 2 Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE=5 V,IC=30 mA 8 10 ⎯ GHz |S21e| 2(1) VCE=5 V,IC=30 mA,f=500 MHz ⎯ 18 ⎯ dB Insertion gain |S21e| 2(2) VCE=5 V,IC=30 mA,f=1 GHz 10.5 12.5 ⎯ dB NF(1) VCE=5 V,IC=30 mA,f=500 MHz ⎯ 0.6 ⎯ dB Noise figure NF(2) VCE=5 V,IC=30 mA,f=1 GHz ⎯ 0.85 1.15 dB 3 rd order intermodulation distortion output intercept point OIP3 VCE=5 V,IC=30 mA,f=500 MHz, ⊿ f=1 MHz ⎯ 32 ⎯ dBmW Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB=5 V,IE=0 A ⎯ ⎯ 0.1 μA DC current gain hFE VCE=5 V,IC=50 mA 200 ⎯ 400 ⎯ Output capacitance Cob VCB=5 V, IE=0 A, f=1 MHz ⎯ 1.45 ⎯ pF Reverse transfer capacitance Cre VCB=5 V,IE=0 A, f=1 MHz (Note 2) ⎯ 0.9 1.2 pF Note 2: Cre is measured using a 3-terminal method with capacitance bridge Caution: This device is sensitive to electrostatic discharge due to the high frequency transistor process of fT=60 GHz class which is used for this product. Please make tool and equipment earthed enough when you handle. |
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