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MT3S111TU Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # MT3S111TU
Description  VHF-UHF Low-Noise, Low-Distortion Amplifier Application
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT3S111TU Datasheet(HTML) 2 Page - Toshiba Semiconductor

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MT3S111TU
2009-03-31
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE=5 V,IC=30 mA
8
10
GHz
|S21e|
2(1)
VCE=5 V,IC=30 mA,f=500 MHz
18
dB
Insertion gain
|S21e|
2(2)
VCE=5 V,IC=30 mA,f=1 GHz
10.5
12.5
dB
NF(1)
VCE=5 V,IC=30 mA,f=500 MHz
0.6
dB
Noise figure
NF(2)
VCE=5 V,IC=30 mA,f=1 GHz
0.85
1.15
dB
3
rd order intermodulation distortion output
intercept point
OIP3
VCE=5 V,IC=30 mA,f=500 MHz,
f=1 MHz
32
dBmW
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB=5 V,IE=0 A
0.1
μA
DC current gain
hFE
VCE=5 V,IC=50 mA
200
400
Output capacitance
Cob
VCB=5 V, IE=0 A, f=1 MHz
1.45
pF
Reverse transfer capacitance
Cre
VCB=5 V,IE=0 A, f=1 MHz (Note 2)
0.9
1.2
pF
Note 2: Cre is measured using a 3-terminal method with capacitance bridge
Caution:
This device is sensitive to electrostatic discharge due to the high frequency transistor process of
fT=60 GHz class which is used for this product.
Please make tool and equipment earthed enough when you handle.


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