MT3S111TU

2009-03-31

1

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type

MT3S111TU

VHF-UHF Low-Noise, Low-Distortion Amplifier Application

Features

• Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz)

Marking

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

13

V

Collector-emitter voltage

6

V

Emitter-base voltage

0.6

V

Collector-current

100

mA

Base-current

10

mA

Collector power dissipation

800

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

UFM

JEDEC

-

JEITA

-

TOSHIBA

2-2U1B

Weight: 6.6 mg (typ.)

1.7±0.1

2.1±0.1

1

2

3

1. BASE

2. EMITTER

3. COLLECTOR

R 5

1

2

3