RN1701JE~RN1706JE

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN1701JE,RN1702JE,RN1703JE

RN1704JE,RN1705JE,RN1706JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

• Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

• A wide range of resistor values is available for use in various circuit

designs.

• Complementary to RN2701JE~RN2706JE

Equivalent Circuit and Bias Resistor Values

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1701JE~

1706JE

50

V

RN1701JE~

1704JE

10

Emitter-base voltage

RN1705JE,

RN1706JE

5

V

Collector current

100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN1701JE~

1706JE

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Unit: mm

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

JEDEC

―

JEITA

―

TOSHIBA

2-2P1D

Weight: 0.003 g (typ.)

Equivalent Circuit

(top view)

5

4

1

2

3

Q2

Q1

R1

B

C

E

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN1701JE

4.7

4.7

RN1702JE

10

10

RN1703JE

22

22

RN1704JE

47

47

RN1705JE

2.2

47

RN1706JE

4.7

47