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TK12A60D Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TK12A60D
Description  Switching Regulator Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TK12A60D Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TK12A60D
2010-08-12
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±1
μA
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
10
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 6 A
0.45
0.55
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6 A
1.9
7.5
S
Input capacitance
Ciss
1800
Reverse transfer capacitance
Crss
9
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
190
pF
Rise time
tr
40
Turn-on time
ton
80
Fall time
tf
15
Switching time
Turn-off time
toff
Duty
≤ 1%, tw = 10 μs
110
ns
Total gate charge
Qg
38
Gate-source charge
Qgs
24
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 12 A
14
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
12
A
Pulse drain reverse current
(Note 1)
IDRP
48
A
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1200
ns
Reverse recovery charge
Qrr
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/μs
13
μC
Marking
Lot No.
K12A60D
Part No.
(or abbreviation code)
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
RL = 33 Ω
0 V
10 V
VGS
VDD ≈ 200 V
ID = 6 A
VOUT
50
Ω


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