TK12A60D

2010-08-12

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK12A60D

Switching Regulator Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

600

V

Gate-source voltage

±30

V

DC

(Note 1)

12

Drain current

Pulse (Note 1)

48

A

Drain power dissipation (Tc

= 25°C)

45

W

Single pulse avalanche energy

(Note 2)

359

mJ

Avalanche current

12

A

Repetitive avalanche energy (Note 3)

4.5

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

2.78

°C/W

Thermal resistance, channel to ambient

62.5

°C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

Ф

3.2

± 0.2

10

± 0.3

2.7

± 0.2

A

1.14

± 0.15

0.69

± 0.15

2.54

2.54

1 2 3

M

Ф

0.2

A

JEDEC

⎯

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

1

3

2

1: Gate

2: Drain

3: Source

Internal Connection