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TK12A60D Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TK12A60D Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TK12A60D 2010-08-12 4 0 50 60 500 400 0 30 20 8 4 16 20 0 VDS VGS VDD = 100 V 200V 400V 12 300 200 100 0 1 2 3 5 −80 −40 0 40 80 120 160 4 1 0.1 10 1000 10000 1 10 100 Ciss Coss Crss 100 0 0.1 1 10 100 -0.6 -1.2 -1.5 -0.3 5 3 1 VGS = 0 V 10 -0.9 160 −40 0 40 80 120 −80 2 1.2 0.8 0.4 0 ID = 3 A 12 6 1.6 Vth − Tc RDS (ON) − Tc IDR − VDS PD − Tc Common source Tc = 25°C Pulse Test Common source VGS = 0 V f =1MHz Tc = 25°C Common source VDS = 10 V ID = 1mA Pulse Test Case temperature Tc (°C) Case temperature Tc (°C) Total gate charge Qg (nC) Capacitance – VDS Drain-source voltage VDS (V) Case temperature Tc (°C) Drain-source voltage VDS (V) Dynamic input / output characteristics Common source ID = 12 A Tc = 25°C Pulse Test Common source VGS = 10 V Pulse Test 80 40 0 0 40 80 120 160 20 60 40 10 |
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