sqd30n05-20l datasheet(3/9 Pages) VISHAY

Part #	SQD30N05-20L

Description	Automotive N-Channel 55 V (D-S) 175 °C MOSFET

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SQD30N05-20L

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Vishay Siliconix

S12-1846-Rev. C, 30-Jul-12

3

Document Number: 67054

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

On-Resistance vs. Junction Temperature

Transfer Characteristics

On-Resistance vs. Drain Current

Source Drain Diode Forward Voltage

0

8

16

24

32

40

0

2

4

6

8

10

V

DS -Drain-to-Source Voltage (V)

V

GS = 10 V thru 4 V

V

GS = 3 V

0

10

20

30

40

50

0

5

10

15

20

25

TC = 125 °C

TC = - 55 °C

TC = 25 °C

ID - Drain Current (A)

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

0

25

50

75

100

125

150

175

ID =20A

VGS =10 V

TJ - Junction Temperature (°C)

0

8

16

24

32

40

0

1234

5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0.00

0.02

0.04

0.06

0.08

0.10

0

8

16

24

32

40

I

D -Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

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SQD30N05-20L Datasheet(PDF) 3 Page - Vishay Siliconix

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