![]() |
Electronic Components Datasheet Search |
|
SQD30N05-20L Datasheet(PDF) 4 Page - Vishay Siliconix |
|
|
SQD30N05-20L Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page ![]() SQD30N05-20L www.vishay.com Vishay Siliconix S12-1846-Rev. C, 30-Jul-12 4 Document Number: 67054 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Capacitance On-Resistance vs. Gate-to-Source Voltage Gate Charge Threshold Voltage Drain Source Breakdown vs. Junction Temperature 0 300 600 900 1200 1500 0 5 10 15 20 25 30 35 40 45 50 55 V DS -Drain-to-Source Voltage (V) C iss C oss C rss 0.00 0.04 0.08 0.12 0.16 0.20 0 2468 10 TJ = 25 °C TJ = 150 °C VGS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 6 0 3 6 9 12 15 Q g -Total Gate Charge (nC) V DS = 25 V I D = 35 A - 1.2 - 0.9 - 0.6 - 0.3 0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA ID =5mA TJ - Temperature (°C) 55 58 61 64 67 70 - 50 - 25 0 25 50 75 100 125 150 175 ID =1mA TJ - Junction Temperature (°C) |
Similar Part No. - SQD30N05-20L |
|
Similar Description - SQD30N05-20L |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |